2SD803 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD803  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3000

Encapsulados: TO3

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2SD803 datasheet

 ..1. Size:204K  inchange semiconductor
 2sd803.pdf pdf_icon

2SD803

isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 2000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier

 9.1. Size:213K  inchange semiconductor
 2sd807.pdf pdf_icon

2SD803

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD807 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM

 9.2. Size:181K  inchange semiconductor
 2sd800.pdf pdf_icon

2SD803

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD800 DESCRIPTION High Breakdown Voltage- V = 750V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX

Otros transistores... 2SD796, 2SD797, 2SD798, 2SD799, 2SD80, 2SD800, 2SD801, 2SD802, BC547B, 2SD804, 2SD805, 2SD806, 2SD807, 2SD808, 2SD809, 2SD81, 2SD810