2SD805 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD805
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 600 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO3A-1

Búsqueda de reemplazo de transistor bipolar 2SD805

2SD805 Datasheet (PDF)

9.1. Size:213K inchange semiconductor
2sd807.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD807DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM

9.2. Size:204K inchange semiconductor
2sd803.pdf

isc Silicon NPN Darlingtion Power Transistor 2SD803DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 2000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier

9.3. Size:181K inchange semiconductor
2sd800.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD800DESCRIPTIONHigh Breakdown Voltage-: V = 750V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1901

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D