2SD809 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD809 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 85 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 250
Encapsulados: TO126
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2SD809 datasheet
2sd807.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD807 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM
2sd803.pdf
isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 2000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier
2sd800.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD800 DESCRIPTION High Breakdown Voltage- V = 750V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX
Otros transistores... 2SD801, 2SD802, 2SD803, 2SD804, 2SD805, 2SD806, 2SD807, 2SD808, S9018, 2SD81, 2SD810, 2SD811, 2SD812, 2SD813, 2SD814, 2SD814A, 2SD815
History: KTC3209 | PDTA114EE
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