2SD826G Datasheet. Equivalente

 8.1. Size:132K  sanyo
 2sd826.pdf

Ordering number EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions Low saturation voltage. unit mm High hFE. 2009A Large current capacity. [2SD826] 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Collector 3 Base 2.4 SANYO TO-126 4.8 Specifications Absolute Maximum Ratings at Ta = 2

 8.2. Size:215K  inchange semiconductor
 2sd826.pdf

isc Silicon NPN Power Transistor 2SD826 DESCRIPTION Large Current Capability-I = 5A C High DC Current Gain- h = 120-560 @ I = 0.5A FE C Low Saturation Voltage - V = 0.5V(Max)@ I = 3A, I = 60mA CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts aud

 9.1. Size:646K  sanyo
 2sd823.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 9.2. Size:192K  wingshing
 2sd820.pdf

2SD820 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 6

 9.3. Size:208K  inchange semiconductor
 2sd823.pdf

isc Silicon NPN Power Transistor 2SD823 DESCRIPTION Collector Current I = 6A C Collector-Emitter Breakdown Voltage- V = 90V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 9.4. Size:203K  inchange semiconductor
 2sd820.pdf

isc Silicon NPN Power Transistor 2SD820 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.5. Size:203K  inchange semiconductor
 2sd822.pdf

isc Silicon NPN Power Transistor 2SD822 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.6. Size:203K  inchange semiconductor
 2sd821.pdf

isc Silicon NPN Power Transistor 2SD821 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )