2SD840 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD840
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 20 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 13 MHz
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SD840

2SD840 Datasheet (PDF)

9.1. Size:242K toshiba
2sd845.pdf

9.2. Size:103K toshiba
2sd842.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.3. Size:130K toshiba
2sd843.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.4. Size:141K fuji
2sd847.pdf

FUJI POWER TRANSISTOR2SD847TRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTONHIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesExcellent linearity hFEHigh collector currentExcellent safe operating areaHigh reliabilityApplicationsAudio ampJEDEC -Series regulators EIAJ SC-65General purpose power amplifiers(Complementary to 2SB757)Maximum ratings and characterist

9.5. Size:196K cn sptech
2sd844o 2sd844y.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754APPLICATIONSHigh current switching applicationsPower amplifier a

9.6. Size:217K inchange semiconductor
2sd845.pdf

isc Silicon NPN Power Transistor 2SD845DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB755Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

9.7. Size:213K inchange semiconductor
2sd847.pdf

isc Silicon NPN Power Transistor 2SD847DESCRIPTIONGood Linearity of hFEHigh Collector CurrentWide Area of Safe OperationHigh ReliabilityComplement to Type 2SB757Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulators applicationsGeneral purpose power amplifiersABSOLUT

9.8. Size:219K inchange semiconductor
2sd844.pdf

isc Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHi

9.9. Size:208K inchange semiconductor
2sd841.pdf

isc Silicon NPN Power Transistor 2SD841DESCRIPTIONHigh Collector-Base Breakdown Voltage: V = 800V(Min.)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T

9.10. Size:214K inchange semiconductor
2sd843.pdf

isc Silicon NPN Power Transistor 2SD843DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier application

9.11. Size:203K inchange semiconductor
2sd849.pdf

isc Silicon NPN Power Transistor 2SD849DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: SMBTA14 | CSD1563Q | MJD112G | 2SA96

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050