2SD845
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD845
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Capacitancia de salida (Cc): 200
pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta:
MT-200
Búsqueda de reemplazo de transistor bipolar 2SD845
2SD845
Datasheet (PDF)
..2. Size:217K inchange semiconductor
2sd845.pdf
isc Silicon NPN Power Transistor 2SD845DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB755Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
9.1. Size:103K toshiba
2sd842.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.2. Size:130K toshiba
2sd843.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.3. Size:141K fuji
2sd847.pdf
FUJI POWER TRANSISTOR2SD847TRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTONHIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesExcellent linearity hFEHigh collector currentExcellent safe operating areaHigh reliabilityApplicationsAudio ampJEDEC -Series regulators EIAJ SC-65General purpose power amplifiers(Complementary to 2SB757)Maximum ratings and characterist
9.4. Size:196K cn sptech
2sd844o 2sd844y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754APPLICATIONSHigh current switching applicationsPower amplifier a
9.5. Size:213K inchange semiconductor
2sd847.pdf
isc Silicon NPN Power Transistor 2SD847DESCRIPTIONGood Linearity of hFEHigh Collector CurrentWide Area of Safe OperationHigh ReliabilityComplement to Type 2SB757Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulators applicationsGeneral purpose power amplifiersABSOLUT
9.6. Size:219K inchange semiconductor
2sd844.pdf
isc Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHi
9.7. Size:208K inchange semiconductor
2sd841.pdf
isc Silicon NPN Power Transistor 2SD841DESCRIPTIONHigh Collector-Base Breakdown Voltage: V = 800V(Min.)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T
9.8. Size:214K inchange semiconductor
2sd843.pdf
isc Silicon NPN Power Transistor 2SD843DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier application
9.9. Size:203K inchange semiconductor
2sd849.pdf
isc Silicon NPN Power Transistor 2SD849DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
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