2SD848A Todos los transistores

 

2SD848A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD848A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 130 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: MT-200

 Búsqueda de reemplazo de transistor bipolar 2SD848A

 

2SD848A Datasheet (PDF)

 9.1. Size:242K  toshiba
2sd845.pdf

2SD848A
2SD848A

 9.2. Size:103K  toshiba
2sd842.pdf

2SD848A
2SD848A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:130K  toshiba
2sd843.pdf

2SD848A
2SD848A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.4. Size:141K  fuji
2sd847.pdf

2SD848A
2SD848A

FUJI POWER TRANSISTOR2SD847TRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTONHIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesExcellent linearity hFEHigh collector currentExcellent safe operating areaHigh reliabilityApplicationsAudio ampJEDEC -Series regulators EIAJ SC-65General purpose power amplifiers(Complementary to 2SB757)Maximum ratings and characterist

 9.5. Size:196K  cn sptech
2sd844o 2sd844y.pdf

2SD848A
2SD848A

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754APPLICATIONSHigh current switching applicationsPower amplifier a

 9.6. Size:217K  inchange semiconductor
2sd845.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD845DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB755Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

 9.7. Size:213K  inchange semiconductor
2sd847.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD847DESCRIPTIONGood Linearity of hFEHigh Collector CurrentWide Area of Safe OperationHigh ReliabilityComplement to Type 2SB757Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulators applicationsGeneral purpose power amplifiersABSOLUT

 9.8. Size:219K  inchange semiconductor
2sd844.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHi

 9.9. Size:208K  inchange semiconductor
2sd841.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD841DESCRIPTIONHigh Collector-Base Breakdown Voltage: V = 800V(Min.)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T

 9.10. Size:214K  inchange semiconductor
2sd843.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD843DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier application

 9.11. Size:203K  inchange semiconductor
2sd849.pdf

2SD848A
2SD848A

isc Silicon NPN Power Transistor 2SD849DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT3903R | SPT5008-3 | 2SD655 | SMBT2907A | 2S33 | 2SD68

 

 
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