2SD861 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD861
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD861
2SD861 Datasheet (PDF)
2sd861.pdf
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isc Silicon NPN Power Transistor 2SD861DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Power Dissipation-: P = 45W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sd863.pdf
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Ordering number:575DPNP/NPN Epitaxial Planar Silicon Transistors2SB764/2SD863Voltage Regulator, Relay Lamp DriverElectrical Equipment ApplicationsPackage Dimensionsunit:mm2006A[2SB764/2SD863]EIAJ : SC-51 B : Base( ) : 2SB764SANYO : MP C : CollectorE : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-B
2sd862.pdf
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2SD862 Silicon Epitaxial Planar TransistorGENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purposeTO-126QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 20 VCollector-emitter voltage (open base)VCEO - 20 VColle
2sd868.pdf
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isc Silicon NPN Power Transistor 2SD868DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection circuits.ABSOLUTE MAXIMU
2sd866 2sd866a.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A DESCRIPTION With TO-220C package Low collector saturation voltage Excellent linearity of hFE High collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating
2sd867.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD867DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min).CEO(SUS)Excellent Safe Operating AreaLow collector saturation voltage: V )= 3.0V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transist
2sd860.pdf
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isc Silicon NPN Power Transistor 2SD860DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sd864.pdf
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isc Silicon NPN Darlington Power Transistor 2SD864DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1.5ACE(sat) CComplement to Type 2SB765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
2sd862.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD862DESCRIPTIONHigh Collector Current-I = 2ACCollector-Emitter Breakdown Voltage-: V = 20V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high frequency, Low Vce(sat) middle powertransi
2sd869.pdf
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isc Silicon NPN Power Transistor 2SD869DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MA
2sd866.pdf
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isc Silicon NPN Power Transistor 2SD866DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HBD241C
History: HBD241C
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Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D