2SD861A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD861 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Power Dissipation- P = 45W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

Ordering number 575D PNP/NPN Epitaxial Planar Silicon Transistors 2SB764/2SD863 Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications Package Dimensions unit mm 2006A [2SB764/2SD863] EIAJ SC-51 B Base ( ) 2SB764 SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-B

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2SD862 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose TO-126 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 20 V Collector-emitter voltage (open base) VCEO - 20 V Colle

isc Silicon NPN Power Transistor 2SD868 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 2A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV deflection circuits. ABSOLUTE MAXIMU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A DESCRIPTION With TO-220C package Low collector saturation voltage Excellent linearity of hFE High collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD867 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min). CEO(SUS) Excellent Safe Operating Area Low collector saturation voltage V )= 3.0V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transist

isc Silicon NPN Power Transistor 2SD860 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1.5A CE(sat) C Complement to Type 2SB765 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD862 DESCRIPTION High Collector Current-I = 2A C Collector-Emitter Breakdown Voltage- V = 20V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high frequency, Low Vce(sat) middle power transi

isc Silicon NPN Power Transistor 2SD869 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MA

isc Silicon NPN Power Transistor 2SD866 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25