2SD861B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD861DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Power Dissipation-: P = 45W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Ordering number:575DPNP/NPN Epitaxial Planar Silicon Transistors2SB764/2SD863Voltage Regulator, Relay Lamp DriverElectrical Equipment ApplicationsPackage Dimensionsunit:mm2006A[2SB764/2SD863]EIAJ : SC-51 B : Base( ) : 2SB764SANYO : MP C : CollectorE : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-B

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2SD862 Silicon Epitaxial Planar TransistorGENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purposeTO-126QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 20 VCollector-emitter voltage (open base)VCEO - 20 VColle

isc Silicon NPN Power Transistor 2SD868DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection circuits.ABSOLUTE MAXIMU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A DESCRIPTION With TO-220C package Low collector saturation voltage Excellent linearity of hFE High collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD867DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min).CEO(SUS)Excellent Safe Operating AreaLow collector saturation voltage: V )= 3.0V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transist

isc Silicon NPN Power Transistor 2SD860DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon NPN Darlington Power Transistor 2SD864DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1.5ACE(sat) CComplement to Type 2SB765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD862DESCRIPTIONHigh Collector Current-I = 2ACCollector-Emitter Breakdown Voltage-: V = 20V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high frequency, Low Vce(sat) middle powertransi

isc Silicon NPN Power Transistor 2SD869DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MA

isc Silicon NPN Power Transistor 2SD866DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25