2SD866A Datasheet. Equivalente

 ..1. Size:93K  inchange semiconductor
 2sd866 2sd866a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A DESCRIPTION With TO-220C package Low collector saturation voltage Excellent linearity of hFE High collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

 8.1. Size:214K  inchange semiconductor
 2sd866.pdf

isc Silicon NPN Power Transistor 2SD866 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:95K  sanyo
 2sd863.pdf

Ordering number 575D PNP/NPN Epitaxial Planar Silicon Transistors 2SB764/2SD863 Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications Package Dimensions unit mm 2006A [2SB764/2SD863] EIAJ SC-51 B Base ( ) 2SB764 SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-B

 9.2. Size:122K  mospec
 2sd868.pdf

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 9.3. Size:127K  mospec
 2sd869.pdf

A A A

 9.4. Size:63K  wingshing
 2sd862.pdf

2SD862 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose TO-126 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 20 V Collector-emitter voltage (open base) VCEO - 20 V Colle

 9.5. Size:206K  inchange semiconductor
 2sd868.pdf

isc Silicon NPN Power Transistor 2SD868 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 2A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV deflection circuits. ABSOLUTE MAXIMU

 9.6. Size:180K  inchange semiconductor
 2sd867.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD867 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min). CEO(SUS) Excellent Safe Operating Area Low collector saturation voltage V )= 3.0V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transist

 9.7. Size:212K  inchange semiconductor
 2sd860.pdf

isc Silicon NPN Power Transistor 2SD860 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

 9.8. Size:211K  inchange semiconductor
 2sd864.pdf

isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1.5A CE(sat) C Complement to Type 2SB765 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

 9.9. Size:183K  inchange semiconductor
 2sd862.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD862 DESCRIPTION High Collector Current-I = 2A C Collector-Emitter Breakdown Voltage- V = 20V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high frequency, Low Vce(sat) middle power transi

 9.10. Size:206K  inchange semiconductor
 2sd869.pdf

isc Silicon NPN Power Transistor 2SD869 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 3A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MA

 9.11. Size:212K  inchange semiconductor
 2sd861.pdf

isc Silicon NPN Power Transistor 2SD861 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Power Dissipation- P = 45W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU