2SD880O Datasheet. Equivalente

 8.1. Size:178K  utc
 2sd880.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number

 8.2. Size:131K  mospec
 2sd880.pdf

A A A

 8.3. Size:200K  jiangsu
 2sd880.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V

 8.4. Size:258K  lge
 2sd880.pdf

2SD880(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collect

 8.5. Size:516K  wietron
 2sd880.pdf

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES 3 1 * Low frequency power amplifier 1. BASE 2. COLLECTOR * Complement to 2SB834 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas

 8.6. Size:664K  jilin sino
 2sd880.pdf

NPN NPN Epitaxial Silicon Transistor R 2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME

 8.7. Size:1121K  blue-rocket-elect
 2sd880.pdf

 8.8. Size:608K  cn haohai electr
 2sd880.pdf

 8.9. Size:222K  inchange semiconductor
 2sd880.pdf

isc Silicon NPN Power Transistor 2SD880 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicatio