2SD883A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD883A 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: MT-200
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2SD883A datasheet
2sd882.pdf
2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications 1 Voltage regulation 2 3 Relay driver SOT-32 Generic switch (TO-126) Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology r
2sd882-gr-r-o-y.pdf
2SD882-R MCC Micro Commercial Components TM 2SD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD882-Y Phone (818) 701-4933 2SD882-GR Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
2sd880.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number
2sd882.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
2sd882l.pdf
UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772L APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92L 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collecto
2sd882s.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 FEATURES SOT-223 SOT-89 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1 * Audio power amplifier TO-92 * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing
2sd886.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER Low Voltage High Current 2. COLLECTOR 3. BASE Equivalent Circuit D886=Device code Solid dot = Green molding compound device, if none, the normal device D886 XXX XXX=Code ORDERING INFORMATION Part Number Package P
2sd880.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V
2sd880.pdf
2SD880(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collect
2sd880.pdf
2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES 3 1 * Low frequency power amplifier 1. BASE 2. COLLECTOR * Complement to 2SB834 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas
2sb776 2sd886.pdf
2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 1.EMITTER P b Lead(Pb)-Free 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB776 Unit NPN/2SD886 VCEO -50 50 V Collector-Emitter Voltage VCBO -50 50 V Collector-Base Voltage VEBO -5.0 5.0 V Emitter-Base Voltage IC -3.0 3.0 A Collector Curren
2sb772 2sd882.pdf
2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc
2sd880.pdf
NPN NPN Epitaxial Silicon Transistor R 2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME
2sd882i.pdf
2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,
2sd882.pdf
2SD882 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,
2sd882d.pdf
2SD882D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. / Applications 3 , ,
st2sd882u.pdf
ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T
st2sd882u-p.pdf
ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector
st2sd882ht.pdf
ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
st2sd882t.pdf
ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
l2sd882q.pdf
LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas
2sd882.pdf
2SD882 NPN Epitaxial Silicon Transistor 1 Description B VCB = 40V The 2SD882 is a medium power low voltagetransistor B VCE = 30V 2 Features I = 3A C High current output up to 3A Low saturation voltage Complement to 2SB772 3 Applications audio power amplifier, DC-DC converter voltage regulator. 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (
2sd882.pdf
Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
2sd882-252.pdf
Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
2sd882a.pdf
SMD Type Transistors NPN Tr ansistors 2SD882A 1.70 0.1 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current to Co
2sd882zgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SD882ZGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.50+0
2sd882gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. *
2sd882-ms.pdf
www.msksemi.com 2SD882-MS Semiconductor Compiance Semiconductor Compiance 1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C
2sd882.pdf
www.msksemi.com 2SD882 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES 2 Power Dissipation 1 3 TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Unit Symbol Parameter Value V 40 V CBO Collector-Base Voltage 2. COLLECTOR V 30 V CEO Collector-Emitter Voltage 3 .EMITTER V 6 V EBO Emitter-Base Voltage I 3 A C Collector Current -
2sd882sq-r 2sd882sq-q 2sd882sq-p 2sd882sq-e.pdf
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ Applications PIN1 Base PIN 2 Collector PIN 3 Emitter These devices are intended for use in audio frequency power amplifier and low speed switching applications 2C 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S
2sd882-r 2sd882-q 2sd882-p 2sd882-e.pdf
D882 NPN Transistors Features 3 NPN transistor High current output up to 3A 2 Low Saturation Voltage Complement to 2SB772 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector
2sd882u.pdf
2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10 ms) ICP 7 A O T
2sd882sq.pdf
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ PIN1 Base PIN 2 Collector PIN 3 Emitter Applications 2C These devices are intended for use in audio frequency power amplifier and low speed switching applications 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S
2sd884.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD884 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.5A CE(sat) C High speed switching APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
2sd882.pdf
2SD882 PNP EPITAXIAL SILICON TRANSISTOR 3A, 60V, 2SD882 HD882 TO-126 1000Pcs 1K 10000Pcs 10K 882 2SD882 Series Pin Assignment 2SD882 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The
2sd880.pdf
isc Silicon NPN Power Transistor 2SD880 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicatio
2sd882.pdf
isc Silicon NPN Power Transistor 2SD882 DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and r
2sd884.pdf
isc Silicon NPN Power Transistor 2SD884 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.5A CE(sat) C High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applications
2sd882u-p.pdf
isc Silicon NPN Power Transistor 2SD882U-P DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.8V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SD880O, 2SD880Y, 2SD882, 2SD882G, 2SD882O, 2SD882R, 2SD882Y, 2SD883, 2N5401, 2SD884, 2SD885, 2SD886, 2SD886A, 2SD887, 2SD888, 2SD889, 2SD88A
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