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2SD890 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD890
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 75 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SD890

 

2SD890 Datasheet (PDF)

 9.1. Size:124K  sanyo
2sd896.pdf

2SD890 2SD890

Ordering number:678F 2SB776 : PNP Epitaxial Planar Silicon Transistor2SD896 : NPN Triple Diffused Planar Silicon Transistor2SB776/2SD896100V/7A, AF 40W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package2022A (Interchangeable with TO-3).[2SB776/2SD896] Wide ASO because of on-c

 9.2. Size:47K  sanyo
2sd894.pdf

2SD890 2SD890

Ordering number:EN590BNPN Epitaxial Planar Silicon Transistor2SD89425V/1.5A Driver ApplicationsUse Package Dimensions Motor drive, printer hummer drive, relay drive,unit:mmvoltage regulator controller.2009A[2SD894]8.0Features 2.74.0 High DC Current Gain (not less than 4000). Wide ASO.3.0 Low saturation voltage (1.5V max). Large power rating (PC=1

 9.3. Size:94K  sanyo
2sd895.pdf

2SD890 2SD890

Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor2SD895 : NPN Triple Diffused Planar Silicon Transistor2SB775/2SD89585V/6A, AF 35W Output ApplicationsFeatures Package Dimensions Wide ASO because of on-chip ballast resistance.unit:mm Capable of being mounted easily becasuse of one-2022Apoint fixing type plastic molded package[2SB775/2SD895](Inter

 9.4. Size:53K  panasonic
2sd893 e.pdf

2SD890 2SD890

Transistor2SD893, 2SD893ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.

 9.5. Size:36K  panasonic
2sd893.pdf

2SD890

 9.6. Size:54K  panasonic
2sd892 e.pdf

2SD890 2SD890

Transistor2SD892, 2SD892ASilicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)Parameter Sym

 9.7. Size:123K  mospec
2sd897.pdf

2SD890 2SD890

AAA

 9.8. Size:203K  inchange semiconductor
2sd896.pdf

2SD890 2SD890

isc Silicon NPN Power Transistor 2SD896DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB776Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40W audio frequency output applications.ABSOL

 9.9. Size:206K  inchange semiconductor
2sd897.pdf

2SD890 2SD890

isc Silicon NPN Power Transistor 2SD897DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 1ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection circuits.ABSOLUTE MAXIMU

 9.10. Size:214K  inchange semiconductor
2sd898.pdf

2SD890 2SD890

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD898DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection

 9.11. Size:218K  inchange semiconductor
2sd895.pdf

2SD890 2SD890

isc Silicon NPN Power Transistor 2SD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB775Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 35W audio frequency output applications.ABSOLU

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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