2SD893A Datasheet. Equivalente

 8.1. Size:53K  panasonic
 2sd893 e.pdf

Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 5.0 0.2 4.0 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer hammer hFE = 4000 to 20000. A shunt resistor is omitted from the driver. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.

 8.2. Size:36K  panasonic
 2sd893.pdf

 9.1. Size:124K  sanyo
 2sd896.pdf

Ordering number 678F 2SB776 PNP Epitaxial Planar Silicon Transistor 2SD896 NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package 2022A (Interchangeable with TO-3). [2SB776/2SD896] Wide ASO because of on-c

 9.2. Size:47K  sanyo
 2sd894.pdf

Ordering number EN590B NPN Epitaxial Planar Silicon Transistor 2SD894 25V/1.5A Driver Applications Use Package Dimensions Motor drive, printer hummer drive, relay drive, unit mm voltage regulator controller. 2009A [2SD894] 8.0 Features 2.7 4.0 High DC Current Gain (not less than 4000). Wide ASO. 3.0 Low saturation voltage (1.5V max). Large power rating (PC=1

 9.3. Size:94K  sanyo
 2sd895.pdf

Ordering number 679F 2SB775 PNP Epitaxial Planar Silicon Transistor 2SD895 NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Capable of being mounted easily becasuse of one- 2022A point fixing type plastic molded package [2SB775/2SD895] (Inter

 9.4. Size:54K  panasonic
 2sd892 e.pdf

Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer hammer hFE = 4000 to 20000. A shunt resistor is omitted from the driver. Absolute Maximum Ratings (Ta=25 C) Parameter Sym

 9.5. Size:123K  mospec
 2sd897.pdf

A A A

 9.6. Size:203K  inchange semiconductor
 2sd896.pdf

isc Silicon NPN Power Transistor 2SD896 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB776 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40W audio frequency output applications. ABSOL

 9.7. Size:206K  inchange semiconductor
 2sd897.pdf

isc Silicon NPN Power Transistor 2SD897 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 1A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV deflection circuits. ABSOLUTE MAXIMU

 9.8. Size:214K  inchange semiconductor
 2sd898.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD898 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV deflection

 9.9. Size:218K  inchange semiconductor
 2sd895.pdf

isc Silicon NPN Power Transistor 2SD895 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB775 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 35W audio frequency output applications. ABSOLU