2SD933 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD933
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 300 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1500
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SD933
2SD933 Datasheet (PDF)
2sd935.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD935 DESCRIPTION With TO-3 Package Low collector saturation voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sd930.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC
Otros transistores... 2SD926 , 2SD927 , 2SD928 , 2SD929 , 2SD93 , 2SD930 , 2SD931 , 2SD932 , D965 , 2SD934 , 2SD935 , 2SD936 , 2SD937 , 2SD938 , 2SD939 , 2SD94 , 2SD940 .
History: IMT3A | NSS12201LT1G | DTL8012 | 2SC1823 | CHUMB8GP | NSE180 | 3CG950
History: IMT3A | NSS12201LT1G | DTL8012 | 2SC1823 | CHUMB8GP | NSE180 | 3CG950
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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