2SD935 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD935 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 250 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 100
Encapsulados: TOP3
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2SD935 datasheet
2sd935.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD935 DESCRIPTION With TO-3 Package Low collector saturation voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sd930.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC
Otros transistores... 2SD928, 2SD929, 2SD93, 2SD930, 2SD931, 2SD932, 2SD933, 2SD934, TIP2955, 2SD936, 2SD937, 2SD938, 2SD939, 2SD94, 2SD940, 2SD941, 2SD942
History: MJE703G | D26C3
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