2SD970K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD970K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 120
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SD970K
2SD970K
Datasheet (PDF)
8.1. Size:37K hitachi
2sd970.pdf 
2SD970(K)Silicon NPN Triple DiffusedApplicationMedium speed and power switching complementary pair with 2SB791(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 2 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltag
8.2. Size:210K inchange semiconductor
2sd970.pdf
isc Silicon NPN Darlington Power Transistor 2SD970DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Saturation VoltageComplement to Type 2SB791Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed and power switchingapplic
9.1. Size:49K panasonic
2sd973.pdf
Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)Paramete
9.2. Size:53K panasonic
2sd973 e.pdf
Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)Paramete
9.3. Size:29K hitachi
2sd974.pdf
2SD974Silicon NPN EpitaxialApplication Power switching TV horizontal deflection outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD974Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current
9.4. Size:31K hitachi
2sd975.pdf
2SD975Silicon NPN EpitaxialApplicationPower switching / TV horizontal deflection outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 2ACollector peak current IC(peak) 2.5
9.6. Size:203K inchange semiconductor
2sd971.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD971DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as electronic ignition,
9.7. Size:202K inchange semiconductor
2sd972.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD972DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsA
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
