2SD976 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD976
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 300 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SD976

2SD976 Datasheet (PDF)

..1. Size:34K no
2sd976.pdf

9.1. Size:49K panasonic
2sd973.pdf

Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)Paramete

9.2. Size:53K panasonic
2sd973 e.pdf

9.3. Size:37K hitachi
2sd970.pdf

2SD970(K)Silicon NPN Triple DiffusedApplicationMedium speed and power switching complementary pair with 2SB791(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 2 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltag

9.4. Size:29K hitachi
2sd974.pdf

2SD974Silicon NPN EpitaxialApplication Power switching TV horizontal deflection outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD974Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current

9.5. Size:31K hitachi
2sd975.pdf

2SD975Silicon NPN EpitaxialApplicationPower switching / TV horizontal deflection outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 2ACollector peak current IC(peak) 2.5

9.6. Size:203K inchange semiconductor
2sd971.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD971DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as electronic ignition,

9.7. Size:202K inchange semiconductor
2sd972.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD972DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsA

9.8. Size:210K inchange semiconductor
2sd970.pdf

isc Silicon NPN Darlington Power Transistor 2SD970DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Saturation VoltageComplement to Type 2SB791Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed and power switchingapplic

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB1203S-E | 2DD1766P | 2C2857

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050