2SD978 Todos los transistores

 

2SD978 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD978

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 450 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD978

 

2SD978 Datasheet (PDF)

5.1. 2sd973 e.pdf Size:53K _panasonic

2SD978
2SD978

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) Parameter Symb

5.2. 2sd973.pdf Size:49K _panasonic

2SD978
2SD978

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) Parameter Symb

 5.3. 2sd975.pdf Size:31K _hitachi

2SD978
2SD978

2SD975 Silicon NPN Epitaxial Application Power switching / TV horizontal deflection output Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 2A Collector peak current IC(peak) 2.5 A C

5.4. 2sd970.pdf Size:37K _hitachi

2SD978
2SD978

2SD970(K) Silicon NPN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 2 k? 200 ? 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7

 5.5. 2sd974.pdf Size:29K _hitachi

2SD978
2SD978

2SD974 Silicon NPN Epitaxial Application Power switching TV horizontal deflection output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak

5.6. 2sd976.pdf Size:34K _no

2SD978

5.7. 2sd970.pdf Size:117K _inchange_semiconductor

2SD978
2SD978

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD970 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Complement to type 2SB791 APPLICATIONS Ў¤ For medium speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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