2SD978 Todos los transistores

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) Paramete

Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) Paramete

2SD970(K) Silicon NPN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 2 k 200 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltag

2SD974 Silicon NPN Epitaxial Application Power switching TV horizontal deflection output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current

2SD975 Silicon NPN Epitaxial Application Power switching / TV horizontal deflection output Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 2A Collector peak current IC(peak) 2.5

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD971 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as electronic ignition,

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD972 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications A

isc Silicon NPN Darlington Power Transistor 2SD970 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Low Saturation Voltage Complement to Type 2SB791 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed and power switching applic