3N90 Todos los transistores

 ..1. Size:486K  utc
 3n90.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3.0A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 3.5 @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Spec

 0.1. Size:202K  1
 ssi3n90a ssw3n90a.pdf

 0.2. Size:887K  1
 sw3n90u swi3n90u swmi3n90u swd3n90u.pdf

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou

 0.3. Size:318K  st
 stp3n90fi.pdf

 0.4. Size:260K  fairchild semi
 ssp3n90.pdf

SSP3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.679 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 0.5. Size:677K  fairchild semi
 fqpf3n90.pdf

September 2000 TM QFET QFET QFET QFET FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has

 0.6. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn

 0.7. Size:689K  fairchild semi
 fqp3n90.pdf

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has

 0.8. Size:697K  fairchild semi
 fqb3n90 fqi3n90.pdf

September 2000 TM QFET QFET QFET QFET FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced techn

 0.9. Size:506K  samsung
 sss3n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.679 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.10. Size:936K  samsung
 ssp3n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.679 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.11. Size:508K  samsung
 ssw3n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V 2 Low RDS(ON) 4.679 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 0.12. Size:503K  samsung
 ssu3n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.679 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 0.13. Size:179K  ixys
 ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1

 0.14. Size:65K  ixys
 ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf

 0.15. Size:261K  semelab
 ssh3n90.pdf

 0.16. Size:518K  taiwansemi
 tsm3n90ch tsm3n90ci tsm3n90cp tsm3n90cz.pdf

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 5.1 @ VGS =10V 1.5 General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re

 0.17. Size:134K  microsemi
 apt33n90jccu2.pdf

APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25 C Super Junction MOSFET ID = 33A @ Tc = 25 C SiC chopper diode Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch D Features - Ultra low RDSon - Low Miller capacitance G - Ultra low gate charge - Avalanche

 0.18. Size:134K  microsemi
 apt33n90jccu3.pdf

APT33N90JCCU3 ISOTOP Buck chopper VDSS = 900V RDSon = 120m max @ Tj = 25 C Super Junction MOSFET ID = 33A @ Tc = 25 C SiC chopper diode Application AC and DC motor control D Switched Mode Power Supplies Features - Ultra low RDSon G - Low Miller capacitance S - Ultra low gate charge - Avalanche energy rated SiC Schottky Diode - Zero rev

 0.19. Size:272K  aosemi
 aotf3n90.pdf

AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 0.20. Size:93K  ape
 ap03n90i-hf.pdf

AP03N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Fast Switching Characteristic RDS(ON) 4.8 Simple Drive Requirement ID 3A G RoHS Compliant S Description G D AP03N90 series are specially designed as main switching devices for S TO-220CFM(I) universal 90 265VAC off-line AC/D

 0.21. Size:94K  ape
 ap03n90p-hf.pdf

AP03N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Simple Drive Requirement RDS(ON) 5.2 Fast Switching Characteristic ID 3A G RoHS Compliant & Halogen-Free S Description AP03N90 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC conve

 0.22. Size:171K  ape
 ap03n90i.pdf

AP03N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Fast Switching Characteristic RDS(ON) 4.8 Simple Drive Requirement ID4 3A G RoHS Compliant S Description AP03N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-

 0.23. Size:963K  jilin sino
 jcs13n90aba jcs13n90wa.pdf

N R N-CHANNEL MOSFET JCS13N90A MAIN CHARACTERISTICS Package ID 13.0 A VDSS 900 V Rdson Vgs=10V 0.75 -MAX Qg-Typ 66.64 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power s

 0.24. Size:66K  solitron
 sdf3n90.pdf

 0.25. Size:155K  solitron
 sdf13n90.pdf

 0.26. Size:633K  crhj
 cs3n90 a3h.pdf

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 0.27. Size:624K  crhj
 cs3n90f a9h.pdf

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.28. Size:496K  crhj
 cs3n90 a8.pdf

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.29. Size:418K  crhj
 cs3n90 a4h.pdf

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 0.30. Size:1102K  cn wxdh
 13n90.pdf

13N90 13A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 900V planar technology which reduce the conduction loss, improve switching I = 13A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 610m 2 Features Fast switching ESD impr

 0.31. Size:1394K  cn wxdh
 dh3n90 dhf3n90 dhi3n90 dhe3n90 dhb3n90 dhd3n90.pdf

DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3

 0.32. Size:973K  belling
 bl3n90-p bl3n90-a bl3n90-u bl3n90-d.pdf

BL3N90 Power MOSFET 1 Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param

 0.33. Size:965K  belling
 bl3n90e-p bl3n90e-a bl3n90e-u bl3n90e-d.pdf

BL3N90E Power MOSFET 1 Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

 0.34. Size:809K  samwin
 swi3n90u swmi3n90u swd3n90u.pdf

SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252 BVDSS 900V ID 3A High ruggedness Low RDS(ON) (Typ 4.8 )@VGS=10V RDS(ON) 4.8 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adaptor, LED, Industrial Power 3 3 3 1. Gate 2. Drain 3. Sou

 0.35. Size:829K  trinnotech
 tmd3n90 tmu3n90.pdf

TMD3N90(G)/TMU3N90(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 2.5A

 0.36. Size:623K  trinnotech
 tmp3n90 tmpf3n90.pdf

TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax Features ID = 2.5A Low gate charge RDS(ON) = 5.1 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N90 / TMPF3N90 TO-220 / TO-220F TMP3N90 / TMPF3N90 RoHS TMP3N90G / TMPF

 0.37. Size:622K  wuxi china
 cs3n90fa9h.pdf

Silicon N-Channel Power MOSFET R CS3N90F A9H General Description VDSS 900 V CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.38. Size:875K  wuxi china
 cs3n90a3h1-g.pdf

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.39. Size:631K  wuxi china
 cs3n90a3h.pdf

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 0.40. Size:416K  wuxi china
 cs3n90a4h.pdf

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 0.41. Size:496K  wuxi china
 cs3n90a8.pdf

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.42. Size:688K  convert
 cs3n90f cs3n90p cs3n90b.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N90F, CS3N90P,CS3N90B 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N90F TO-220F CS3N90

 0.43. Size:951K  cn hmsemi
 hm3n90f.pdf

HM3N90F Silicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25 ) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

 0.44. Size:914K  cn hmsemi
 hm3n90i.pdf

HM3N90I Silicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90I, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for

 0.45. Size:252K  inchange semiconductor
 aotf3n90.pdf

isc N-Channel MOSFET Transistor AOTF3N90 FEATURES Drain Current I =2.4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =6.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.46. Size:355K  inchange semiconductor
 sw3n90u.pdf

isc N-Channel MOSFET Transistor SW3N90U FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 5.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno