2N250 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N250

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 30 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO3

 Búsqueda de reemplazo de 2N250

- Selecciónⓘ de transistores por parámetros

 

2N250 datasheet

 0.1. Size:100K  njs
 2n2509.pdf pdf_icon

2N250

 0.2. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

2N250

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

 0.3. Size:206K  ixys
 ixbh42n250.pdf pdf_icon

2N250

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 25 V G = Gate C = Collector VGEM Transient 35

 0.4. Size:175K  ixys
 ixgh2n250.pdf pdf_icon

2N250

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2

MOSTRAR MÁS

Otros transistores... 2N2490, 2N2491, 2N2492, 2N2493, 2N2494, 2N2495, 2N2496, 2N25, D882P, 2N2501, 2N2509, 2N250A, 2N251, 2N2510, 2N2511, 2N2512, 2N2514