2N250 Todos los transistores

 

2N250 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N250
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3
     - Selección de transistores por parámetros

 

2N250 Datasheet (PDF)

 0.1. Size:100K  njs
 2n2509.pdf pdf_icon

2N250

 0.2. Size:180K  ixys
 ixbt2n250.pdf pdf_icon

2N250

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC

 0.3. Size:206K  ixys
 ixbh42n250.pdf pdf_icon

2N250

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

 0.4. Size:175K  ixys
 ixgh2n250.pdf pdf_icon

2N250

Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2

MOSTRAR MÁS

Otros transistores... 2N2490 , 2N2491 , 2N2492 , 2N2493 , 2N2494 , 2N2495 , 2N2496 , 2N25 , TIP142 , 2N2501 , 2N2509 , 2N250A , 2N251 , 2N2510 , 2N2511 , 2N2512 , 2N2514 .

History: 2SC1042 | 2N2108 | MJD117T4 | FMMTA42R | IR901 | BDX16 | DTA208

 

 
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