2N2509 Todos los transistores

 ..1. Size:100K  njs
 2n2509.pdf

 9.1. Size:180K  ixys
 ixbt2n250.pdf

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

 9.2. Size:206K  ixys
 ixbh42n250.pdf

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 25 V G = Gate C = Collector VGEM Transient 35

 9.3. Size:175K  ixys
 ixgh2n250.pdf

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2

 9.4. Size:175K  ixys
 ixgt2n250.pdf

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge VCE(sat) 3.1V Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (IXGT) IC2

 9.5. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf

High Voltage IXTH02N250 VDSS = 2500V Power MOSFETs ID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V PLUS220SMD (IXTV_S) VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Continuous 20 V VGSM Transient

 9.6. Size:180K  ixys
 ixbh2n250.pdf

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

 9.7. Size:184K  ixys
 ixta02n250hv.pdf

Advance Technical Information High Voltage IXTA02N250HV VDSS = 2500V Power MOSFET ID25 = 200mA RDS(on) 450 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V S = Source Tab = Drain VGSS