9012H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol

S9012-GMCCMicro Commercial ComponentsTMS9012-H20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S9012-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWJunction Temperature Tj 150

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

*********************************************************************************** S 9012 PNP EPITAXIAL SILICON TRANSISTOR: Ta=25) - VCBO -40 V - VCEO -20 V - VEBO -5 V

RUMW UMW S9012SOT-23 Plastic-Encapsulate TransistorsS9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S90131. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT9012G : K2 1.BaseMMBT9012H : K32. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollec

S9012S9012S9012S9012S9 0 12 TRANSISTOR(PNP)FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1BASE 2EMITTER MARKING: 2T1 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage -5