A179 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN3709 PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT processes. unit mm Low saturation voltage. 2042A Fast switching speed. [2SA1798] Large current capacity. B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C Param

2010 4 1 NEC

SMD Type IC SMD Type IC MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS(on)1 =69 m MAX. (VGS =10 V, ID =1.5 A) RDS(on)2 =72 m MAX. (VGS =4.0 V, ID =1.5 A) RDS(on)3 = 107 m MAX. (VGS =2.5 V, ID =1.0 A) P-channel RDS(on)1 = 115 m MAX. (VGS =-4.5 V, ID =-1.5A) RDS(on)2 = 120 m MAX. (VGS =-4.0V, ID =-1.5 A) RDS(on)3 = 190 m MAX. (VGS =-2.5V, ID =-1.0 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage

2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291

Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit mm) 1) Low saturation voltage. MPT3 VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.5 1.5 1.6 3) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.4 0.5 0.4 0.4 Type 2SA1797 1.5 1.5 3.0 (1)Base Package MPT3 (2)Collector hFE PQ (3)Emi

2DA1797 50V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT89 Ideally Suited for Automated Assembly Processes Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity Level 1 per J

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4656 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. Small collector output capacitance Cob. 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Ma

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel - 2SA1797G-x-AB3-R SOT-8

2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 1 2 3 A PACKAGE DIMENSIONS E C B D 1 F G 2 H K 3 J L 1. Base 2. Collector Millimeter Millimeter REF. REF. 3. Emitter Min. Max. Min. Max. A 4.40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1795 Case E-pack (TE5T4) Unit mm -5A PNP RATINGS

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1796 Case E-pack (TE7T4) Unit mm -7A PNP RATINGS

2SA1797 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 4.6 B 1 4.4 1.6 1.8 1.4 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low saturation voltage 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent DC current gain characteristics 1.5 3.0 Complements to 2SC4672 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless other

WILLAS 2SA1797 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASE Pb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1 Halogen free product for packing code suffix "H" 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50V IC -2A BTA1797M3 VCESAT(Max) -0.2V Description Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Typ

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Typ

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

SMD Type Transistors PNP Transistors 2SA1797 Features 1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol

SMD Type Transistors Power Transistor 2SA1797 SOT-89 Unit mm +0.1 4.50-0.1 1.50+0.1 -0.1 1.80+0.1 -0.1 Features Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. 0.48+0.1 0.53+0.1 0.44+0.1 -0.1 -0.1 -0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta

2SA1797 PNP Transistors Features 3 Low saturation voltage Excellent DC current gain characteristics 2 Complements to 2SC4672 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6

DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE SOT-89 PACKAGE TERMINALS SOLDERABLE PER MIL-ST

Plastic-Encapsulate Transistors FEATURES 2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V 1. BASE Emitter-Base Voltage VEBO -6 V 2. COLLECTO SOT-89 Collector Current -Contin