2N26 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N26
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 8 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO7
Búsqueda de reemplazo de 2N26
- Selecciónⓘ de transistores por parámetros
2N26 datasheet
0.8. Size:62K central
2n2646 2n2647.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.9. Size:116K comset
2n2647.pdf
2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of pr
0.11. Size:11K semelab
2n2696csm.pdf
2N2696CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004
0.12. Size:163K isahaya
rt2n26m.pdf
RT2N26M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
0.13. Size:133K bocasemi
2n2646 2n2647.pdf
Boca Semiconductor Corp. (BSC) http //www.bocasemi.com http //www.bocasemi.com
0.14. Size:45K microsemi
2n2608.pdf
TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate
0.15. Size:45K microsemi
2n2609.pdf
TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Dera
0.16. Size:152K microsemi
2n2604ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV
0.17. Size:54K microsemi
2n2604 2n2605.pdf
TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250
Otros transistores... 2N2594, 2N2594T, 2N2595, 2N2596, 2N2597, 2N2598, 2N2599, 2N2599A, BD136, 2N260, 2N2600, 2N2600A, 2N2601, 2N2602, 2N2603, 2N2604, 2N2605
