BC109CP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

BC107BC108-BC109LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC107, BC108 and BC109 are silicon planarepitaxial NPN transistors in TO-18 metal case.Theyare suitable for use in driver stages, low noise inputstages and signal processing circuits of televisionreceivers. The complementary PNP types are re-spectively the BC177, BC178 and BC179.TO-18INTERNAL SCHEMATI

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM Dual Silicon Planar NPN Transistors Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector Base Vol

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS BC107/A/B/CBC108/A/B/CBC109/A/B/CTO-18Metal Can PackageLow Noise General Purpose Audio AmplifiersABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BC107 BC108 BC109 UNITVCEOCollector Emitter Voltage 45 25 V25VCBOCollector Base Voltage 50 30 V30VEBOEm

isc General Purpose NPN Small Signal Transistor BC109DESCRIPTIONWith TO-18 package.High DC Current Gain-: h :200-800@ (V = 5V, I = 2mA)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned For Low Noise General Purpose Amplifiers,Driver Stages and Signal Processing ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)