BC114A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

MUN5315DW1,NSBC114TPDXV6Complementary BiasResistor TransistorsR1 = 10 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monol

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

NSBC114EDXV6T1,NSBC114EDXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digital tra

MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN2215, MMUN2215L,MUN5215, DTC114TE,DTC114TM3, NSBC114TF3Digital Transistors (BRT)R1 = 10 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

NSBC114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The digital transistorcontains a single transistor with a monolithic bias network consistingof two resistors;

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

Spec. No. : C355S6R Issued Date : 2003.05.23 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 Dual NPN Digital Transistors HBC114YS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol

Spec. No. : C351S6R Issued Date : 2003.05.22 CYStech Electronics Corp.Revised Date : 2011.02.21 Page No. : 1/6 Dual NPN Digital Transistors HBC114ES6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete is

Spec. No. : C353S6R Issued Date : 2003.05.23 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 Dual NPN Digital Transistors HBC114TS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol

Spec. No. : C355C6 Issued Date : 2012.07.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Dual NPN Digital Transistors HBC114YC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allo

Spec. No. : C355S5 Issued Date : 2011.11.16 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Dual NPN Digital Transistors HBC114YS5 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allo