2N264 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N264
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 45 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO22
- Selección de transistores por parámetros
2N264 Datasheet (PDF)
2n2646 2n2647.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2647.pdf

2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of pr
Otros transistores... 2N2633 , 2N2634 , 2N2635 , 2N2636 , 2N2637 , 2N2638 , 2N2639 , 2N2639DCSM , TIP35C , 2N2640 , 2N2640DCSM , 2N2641 , 2N2641DCSM , 2N2642 , 2N2642DCSM , 2N2643 , 2N2643DCSM .
History: 2N6619 | MBT3904DW1T3G | 2SC3550 | RT1P144M | 2N186 | 2SA1471S
History: 2N6619 | MBT3904DW1T3G | 2SC3550 | RT1P144M | 2N186 | 2SA1471S



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793 | d965