BC183A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC183A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BC183A
BC183A Datasheet (PDF)
bc182 bc183 bc184.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC182/DAmplifier TransistorsBC182,A,BNPN SiliconBC183BC184COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC182 183 184Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitterBase Voltage
bc183.pdf
June 2007BC183NPN General Purpose AmpliferTO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTSTG , TJ Storage Junction Temperature
bc183lc.pdf
BC183LCNPN General purpose Amplifier.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTJ Junction Temperature 150 CTSTG Storage
bc183c.pdf
June 2007BC183CNPN General Purpose AmpliferTO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTSTG , TJ Storage Junction Temperatur
bc182 bc183 bc184.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC182, A, BNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC183, A, B, CBC184, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC182 BC183 BC184 UNITSCollector Emitter
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC196A | ZTX531K | CMBA857E | 3DD13005_C3D | MMBTSC2712-Y | MMUN2214L | BCW77
History: BC196A | ZTX531K | CMBA857E | 3DD13005_C3D | MMBTSC2712-Y | MMUN2214L | BCW77
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050