BC212BP Todos los transistores

 8.1. Size:27K  fairchild semi
 bc212b.pdf

BC212B PNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Vo

 8.2. Size:59K  onsemi
 bc212b-d.pdf

BC212B Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -60 Vdc 3 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc Total Device Dissipation @ TA = 25 C PD 350 mW Derate a

 9.1. Size:107K  motorola
 bc212 bc213 bc214.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC212/D Amplifier Transistors BC212,B PNP Silicon BC213 COLLECTOR BC214 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 212 213 214 Rating Symbol Unit CASE 29 04, STYLE 17 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 30 30 Vdc Collector Base Voltage VCBO 60 45 45 Vdc Emitte

 9.2. Size:29K  fairchild semi
 bc212l.pdf

BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 50 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO Emitter-Base Voltage Collector Curr

 9.3. Size:27K  fairchild semi
 bc212lb.pdf

BC212LB PNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base V

 9.4. Size:11K  semelab
 bc212csm.pdf

BC212CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 50V A = (0.04 0.004)

 9.5. Size:10K  semelab
 bc212dcsm.pdf

BC212DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 50V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.05

 9.6. Size:76K  cdil
 bc212l la lb bc214l.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package BC212L, BC212LA, BC212LB BC214L, BC214LB, BC214LC PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 L 1.982 2.082 ALL DIMENSIONS IN M.M.