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BC214B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC214B
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

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BC214B Datasheet (PDF)

 9.1. Size:107K  motorola
bc212 bc213 bc214.pdf

BC214B
BC214B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC212/DAmplifier TransistorsBC212,BPNP SiliconBC213COLLECTORBC21432BASE1EMITTER1MAXIMUM RATINGS23BC BC BC212 213 214Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitte

 9.2. Size:27K  fairchild semi
bc214l.pdf

BC214B
BC214B

BC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVE

 9.3. Size:27K  fairchild semi
bc214lb.pdf

BC214B
BC214B

BC214LBPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV

 9.4. Size:28K  fairchild semi
bc214.pdf

BC214B
BC214B

BC214PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVEB

 9.5. Size:27K  fairchild semi
bc214lc.pdf

BC214B
BC214B

BC214LCPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV

 9.6. Size:76K  cdil
bc212l la lb bc214l.pdf

BC214B
BC214B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic PackageBC212L, BC212LA, BC212LBBC214L, BC214LB, BC214LCPNP SILICON PLANAR EPITAXIAL TRANSISTORSAmplifier TransistorsDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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