BC214L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC214L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BC214L
BC214L Datasheet (PDF)
bc214l.pdf
BC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVE
bc212l la lb bc214l.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic PackageBC212L, BC212LA, BC212LBBC214L, BC214LB, BC214LCPNP SILICON PLANAR EPITAXIAL TRANSISTORSAmplifier TransistorsDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.
bc214lb.pdf
BC214LBPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV
bc214lc.pdf
BC214LCPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV
bc212 bc213 bc214.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC212/DAmplifier TransistorsBC212,BPNP SiliconBC213COLLECTORBC21432BASE1EMITTER1MAXIMUM RATINGS23BC BC BC212 213 214Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitte
bc214.pdf
BC214PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVEB
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: SU177 | 2SC1522 | 2N1198
History: SU177 | 2SC1522 | 2N1198
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050