BC239BP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC239BP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BC239BP
BC239BP Datasheet (PDF)
bc237 bc238 bc239.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC237/DAmplifier TransistorsBC237,A,B,CNPN SiliconBC238B,CBC239,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC237 238 239Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorEmitter Voltage VCES 50 30 30 VdcEmitterBa
bc237 bc238 bc239.pdf
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES V:BC237 50 VBC238/239 30Collector-Emitter Voltage VCEO:BC237 45 VBC238/239 25 VEmitter-Base Voltage VEBO:BC237 6 VBC238/239 5 VCollector Current (DC) IC 100 mA
bc237 bc238 bc239.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC237,238, A,B,CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC239, B,CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC237 BC238 BC239 UNITSCollector Emitter Voltage VCE
bc237 bc238 bc239.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC237 / BC238 / BC239 TRANSISTOR (NPN)FEATURES TO-92 Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE BC237 BC238 BC239 3. EMITTER XXX XXX XXX1 1 1Equivalent Circuit BC237,BC238,BC239=Device code Solid dot=Green molding compound device, if none,the normal dev
bc237 bc238 bc239.pdf
SEMICONDUCTOR BC237/8/9TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC237 VCEO=45V.Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=6V, IC=0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With PNP type BC307/308/309. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27
bc107 bc108 bc109 bc167 bc168 bc169 bc237 bc238 bc239 bc317 bc318 bc319.pdf
bc237 bc238 bc239.pdf
BC237/238/239(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)Collector-Emitter Voltage BC237 45 VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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