BC308 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC308
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BC308
BC308 Datasheet (PDF)
bc307 bc308 bc309.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC307/DAmplifier TransistorsBC307,B,CPNP SiliconBC308CCOLLECTORBC309B12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC307 308C 309Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorBase Voltage VCBO 50 30 30 VdcE
bc307 bc308 bc309.pdf
BC307/308/309Switching and Amplifier Applications Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC307 -50 V: BC308/309 -30 VVCEO Collector-Emitter Voltage: BC307 -45 V: BC308/309 -25 VVEBO Emitter-Base Volta
bc307 bc308 bc309 a b c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, CBC 308, A, B, CBC 309, A, B, CTO-92Plastic PackageGeneral Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio FrequenciesABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC307
bc307 bc308 bc309.pdf
SEMICONDUCTOR BC307/8/9TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC307 VCEO=-45V.Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=-6V, IC=-0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With NPN type BC237/238/239. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.2
bc177 bc178 bc179 bc257 bc258 bc259 bc307 bc308 bc309 bc320 bc321 bc322.pdf
bc307 bc308 bc309.pdf
BC307/308/309(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Emitter Voltage BC307 -45 VCEO V BC308/309 -25 Emitter-Base Voltage BC307 -6 VEBO V BC308/309 -5 Collector Current -Continuous -0.1 IC A Collec
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SA301
History: 2SA301
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