BC327L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC327/DAmplifier TransistorsPNP SiliconBC327,-16,-25BC328,-16,-25COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC327 BC328 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC327PNP general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationPNP general purpose transistor BC327FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 baseAPPLICATIONS3 collector

BC807; BC807W; BC32745 V, 500 mA PNP general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors.Table 1. Product overviewType number Package NPN complementNXP JEITABC807 SOT23 - BC817BC807W SOT323 SC-70 BC817WBC327[1] SOT54 (TO-92) SC-43A BC337[1] Also available in SOT54A and SOT54 va

BC327-25BC327-40SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC327-25 BC327-25 TO-92 / BulkBC327-25-AP BC327-25 TO-92 / AmmopackBC327-40 BC327-40 TO-92 / BulkBC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTORS TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLYTO-92 TO-92 THE NPN COMPLEMENTARY TYPES

BC327/328Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC327 -50 V: BC328 -30 VVCEO Collector-Emitter Vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC327-xBK / BC328-xBKBC327-xBK / BC328-xBKGeneral Purpose Si-Epitaxial Planar TransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-06-230.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9

BC327-16/25/40MCCTMMicro Commercial ComponentsBC328-16/25/4020736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-curre

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC327, BC327-16,BC327-25, BC327-40Amplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS2BASERating Symbol Value UnitCollector -Emitter Voltage VCEO -45 Vdc3Collector -Base Voltage VCES -50 VdcEMITTERCollector -Emitter Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdcTotal Power D

SBC327SemiconductorSemiconductorPNP Silicon TransistorDescriptions High current application Switching applicationFeatures Suitable for AF-Driver stage and low power output stages Complementary Pair with SBC337Ordering InformationType NO. Marking Package Code0 SBC327 SBC327 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.06

BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 111J2Base 222CLASSIFICATION OF hFE (1) 3A D 3Emitter 33Product-Rank BC327-16 BC327-25 BC327-40 BMillimeter REF. Min. Max. Product-Rank BC328-16 B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC327/A BC328 PNPSILICON PLANAR EPITAXIAL TRANSISTORSBC337/A BC338 NPNTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCGeneral Purpose Transistors Best Suited for use in Driver and Output Stages of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES 1. COLLECTOR Power dissipation 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnit 3. EMITTER VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25

SEMICONDUCTOR BC327TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. FEATURESHigh Current : IC=-800mA.DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).For Complementary with NPN type BC337.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollector-Base VoltageVCEO -45 VCollector-Emitter VoltageVEBOEm

BC327/328(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnits VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800

BC327/BC328PNP General Purpose TransistorCOLLECTOR1P b Lead(Pb)-FreeTO-922BASE13 23EMITTERMaximum Ratings(TA=25C unless otherwise noted)Rating Symbol BC327 BC328 UnitVCBOCollector-Base voltage-50 -30 VVCEOVCollector-Emitter voltage -45 -25VEBOVEmitter-Base voltage-5.0 -5.0Collector Current Continuous lCmA800Total Device DissipationPD62

DIP Type TransistorsPNP TransistorsBC327 (KC327)Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=-0.8A Collector Emitter Voltage VCEO=-45V Pb-Free Packages are Available0.60 Max0.45 0.1 0.521 3COLLECTOR11.Collector2.Base1.2722.54 3.EmitterBASE3EMITTER Absolute Maximum Ratings Ta = 25Parameter Sym