BC517P Todos los transistores

 

BC517P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC517P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 30000
   Paquete / Cubierta: TO92
     - Selección de transistores por parámetros

 

BC517P Datasheet (PDF)

 9.1. Size:206K  motorola
bc517rev.pdf pdf_icon

BC517P

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC517/DDarlington TransistorsNPN SiliconBC517COLLECTOR 1BASE2EMITTER 3123MAXIMUM RATINGSCASE 2904, STYLE 17Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCB 40 VdcEmitterBase Voltage VEB 10 VdcCollector Current Continuous IC

 9.2. Size:43K  philips
bc517.pdf pdf_icon

BC517P

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

 9.3. Size:49K  philips
bc517 4.pdf pdf_icon

BC517P

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

 9.4. Size:27K  fairchild semi
bc517.pdf pdf_icon

BC517P

January 2005BC517NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emi

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: RN1912FS | 2SC2947 | 2N6463 | BC231B | ECG238 | MJW0281AT4TL | 2SA1371F

 

 
Back to Top

 


 
.