BC546 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC546/DAmplifier TransistorsBC546, BNPN SiliconBC547, A, B, CBC548, A, B, CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC546 547 548Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 65 45 30 VdcCollectorBase Voltage VCBO 80 50 30 VdcEmitt

BC846/BC546 series65 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC846 SOT23 - TO-236AB BC856BC846W SOT323 SC-70 - BC856WBC846T SO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC546; BC547NPN general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN general purpose transistors BC546; BC547FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 emitter2 baseAPPLICATIONS

Phi I i ps Semi cnduct rsPrduct speci ficat i n Phi l i ps Semi conduct ors Product speci ficat i onNPN generaI purpse t ransi st rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547FEATURES PI NNI NG THERMAL CHARACTERI STI CS Low cur r ent (max. 100mA)PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T Low vol t age (max. 65 V).1 emi t t er Rthj-a t

BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE

BC546A/B/CMCCMicro Commercial C omponentsTMBC547A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC548A/B/CFax: (818) 701-4939FeaturesNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Amplifier Transistor Through Hole Package 150 C Junction Tempe

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC546, A, B, CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC547, A. B, CBC548, A. B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC546 BC547 BC548 UNITSCollector Em

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC546 / BC547 / BC548 TRANSISTOR (NPN)TO-92 FEATURES High Voltage Complement to BC556,BC557,BC5581. COLLECTOR 2. BASE 3. EMITTER BC546 BC547 BC548 Z XXX Z XXX Z XXX1 1 1Equivalent Circuit BC546,BC547,BC548=Device code Solid dot=Green molding compound device, i

SEMICONDUCTOR BC546/7/8TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESHigh Voltage : BC546 VCEO=65V.N DIM MILLIMETERSFor Complementary With PNP Type BC556/557/558.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25)H 0.45_H J 14.00 + 0.50CHARACTERISTIC S

BC546/BC547/BC548(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER FeaturesHigh Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 Dimensions in i

BC546/BC547/BC548(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTERFeaturesHigh Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 6 VEBO Emitter-Ba

BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC 100mAdcTHERMAL CHA

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC546B, BC547A, B, C,BC548B, CAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO VdcBC546 653BC547 45EMITTERBC548 30Collector - Base Voltage VCBO VdcBC546 80BC547 50BC548 30TO-92Emitter - Base Voltage VEBO 6.0 VdcCASE 2

SBC546NPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures High voltage : VCEO=55V E Complementary pair with SBC556 TO-92 Ordering Information Type NO. Marking Package Code SBC546 SBC546 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base volt

BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 111 1Collector J 2Base 222CLASSIFICATION OF hFE 3Emitter 333A DProduct-Rank BC546A BC546B BC546C Millimeter REF. BMin. Max. Product-Rank BC547A BC547B

BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi

BC546xBK ... BC549xBKBC546xBK ... BC549xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-030.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial