BC549B. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BC549B datasheet

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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi

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Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector Emitter Voltage VCEO 30 45 Vdc Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25 C PD 625 mW 2 Derate above 25 C 5.0 mW/ C 3 Total Device Dissipation @ TC = 25

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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