BC559A Todos los transistores

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-07 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 30 45 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO

BC556/557/558/559/560 Switching and Amplifier High Voltage BC556, VCEO= -65V Low Noise BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC556 -80 V BC557/560 -50 V BC558/559 -30 V

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit http //onsemi.com Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current Continuous IC -100 mAdc Total Device Dissipation @ PD mW 1 TA = 25 C 625 2 3 Derate above 25 C 5.0 mW/ C Total Device Dissipation @ P

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BC559 BC560 UNITS VCEO Collector Emitter Voltage 30 45 V VCBO Collector Base Voltage 30 50 V VEBO Emit

SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B C FEATURE For Complementary with NPN Type BC549/550. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 BC559 -30 G 0.85 VCBO Collector-Base Voltage V H 0.45 BC560 -50 _ H J 14.00 + 0.50 K