BC817-16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC817-16
Código: 2M_6A_6Ap_6As_6At_6AW_6AZ_8FA_G6A_K6A_NAA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.31 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BC817-16
BC817-16 Datasheet (PDF)
bc817-16.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC81716LT1/DBC817-16LT1General Purpose TransistorsNPN SiliconBC817-25LT1COLLECTOR3BC817-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO
bc817 bc817-16.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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BC817 series45 V, 500 mA NPN general-purpose transistorsRev. 7 18 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817 SOT23 TO-236AB - BC807BC817-16 BC807-16BC817-25 BC807-25
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications
bc817-16 bc817-25 bc817-40.pdf
BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epox
bc817-16 bc817-40 sot-23.pdf
BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity L
bc817-16 bc817-25 bc817-40.pdf
BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 NPN General Purpose AmplifierFEATURES 1. BASE For general AF application. A SOT-23 2. EMITTERDim Min Max Complementary PNP type available 3. COLLECTORA 2.70 3.10EBC807. B 1.10 1.50K B High collector current, high current gain. C 1.0 TypicalD 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48JDG 1.80 2.00ORDERING
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BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollec
bc817-16 bc817-25 bc817-40.pdf
BC817 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 45 Volt POWER330 mWFEATURES General purpose amplifier applications0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICA
bc817-16 bc817-25 bc817-40.pdf
BC817NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50
bc817-16 bc817-25 bc817-40.pdf
RUMW UMW BC817SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40NPN TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the PNP transistors BC817 arerecommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (TA=25, unless otherwisenoted)Parameter Symbol Valu
bc817-16 bc817-25 bc817-40.pdf
BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B
bc817-16 bc817-25 bc817-40.pdf
HD ST0.3SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )FeaturesSOT- 23For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter
bc817-16 bc817-25 bc817-40.pdf
BC817SOT-23 Plastic-Encapsulate TransistorSOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton S
bc817-16 bc817-25 bc817-40.pdf
www.msksemi.comBC817-16/25/40Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) hFE
bc817-16 bc817-25 bc817-40.pdf
Jingdao Microelectronics co.LTD BC817BC817SOT-23NPN TRANSISTOR3FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types: BC807 (PNP)21.BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2.EMITTER3.COLLECTORSy
bc817-16 bc817-25 bc817-40.pdf
BC817 SeriesTRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 VCo
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
bc817-16 bc817-25 bc817-40.pdf
BC817BC817BC817BC817BC8 17TRANSISTOR(NPN)FEATURE For general AF applications SOT-23 High collector current High current gain 1BASE Low collector-emitter saturation voltage 2EMITTER Complementary types: BC807 (PNP) 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage
bc817-16 bc817-25 bc817-40.pdf
RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a Collector-Base Voltage 50 V Collec
bc817-16 bc817-25 bc817-40.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC817FEATURES NPN Low Frequency AmplifierTransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 45 VCEOCollector-Base VoltageV 50 VCBO-Emitter-
bc817-16 bc817-25 bc817-40.pdf
BC817BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless o
bc817-16 bc817-25 bc817-40.pdf
Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsA Complementary Types Available (BC )SOT-23CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HMaximum
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BC817W series45 V, 500 mA NPN general-purpose transistorsRev. 7 11 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817W SOT323 - SC-70 BC807WBC817-16W BC807-16WB
bc817-16w.pdf
BC 817-16WNPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)Type Marking Ordering Code Pin Configuration PackageBC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323BC 817-40W 6Cs Q6
bc817-16-25-40.pdf
BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF
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BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu
bc817-16w-25w-40w.pdf
BC817-16W / -25W / -40WLead-free GreenNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary PNP Types Available (BC807-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1
bc817-16q bc817-40q.pdf
BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature
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BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi
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BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
bc817-16lt1-25-40.pdf
BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect
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BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
sbc817-16lt3g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
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bc817-16-25-40.pdf
BC817-16/BC817-25BC817-40COLLECTOR3General Purpose Transistor3NPN Silicon11BASE2SOT-232EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating SymbolUnitValueVCEO 45Collector-Emitter Voltage VdcVCBO VdcCollector-Base Voltage50VEBO Vdc5.0Emitter-Base VoltagemAdcCollector Current-Continuous IC500Thermal CharacteristicsChara
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-16dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin
lbc817-16lt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16LT1GGeneral Purpose TransistorsLBC817-25LT1GLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-40LT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAX
lbc817-16wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-16WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-16WT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V
bc817-16lg.pdf
BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current - Continuous IC 500 mAdc1BASE2EMITTERDevi
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PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan
bc817-16-g.pdf
General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)
kbc817-16 kbc817-25 kbc817-40c.pdf
KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
bc817-16-25-40.pdf
RoHS BC817- 16/ - 25/ 40BC817- 16/ - 25/ 40NPN EPTTAXIAL SILICON TRANSISTORSURFACE MOUNT SMALLSIGANL TRANSISTORSoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Emitter VoltageVCEO 45 VVEmitter-Base Voltage VCBO 50mACollector Current Ic 1000Peak Colteetor Current IcM mA1000Peak Fmitter Current IEM mA800oPDPower Dissipation
bc817-16w bc817-25w bc817-40w.pdf
RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking:BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless
bc817-16q bc817-25q bc817-40q.pdf
RoHS RoHSCOMPLIANT COMPLIANTBC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 40269
History: 40269
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050