BC817-25 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC817-25
Código: 2N_6B_6Bp_6Bs_6Bt_6BW_6BZ_8FB_G6b-k6B_NAB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 160
Encapsulados: SOT23
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BC817-25 datasheet
bc817 bc817-16 bc817-25 bc817-40 bc817w bc817-16w bc817-25w bc817-40w bc337 bc337-16 bc337-25 bc337-40.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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BC817 series 45 V, 500 mA NPN general-purpose transistors Rev. 7 18 June 2018 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC JEITA BC817 SOT23 TO-236AB - BC807 BC817-16 BC807-16 BC817-25 BC807-25
bc817-16 bc817-25 bc817-40.pdf
BC817-16 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BC817-40 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Signal Transistor Epox
bc817-16 bc817-25 bc817-40.pdf
BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 NPN General Purpose Amplifier FEATURES 1. BASE For general AF application. A SOT-23 2. EMITTER Dim Min Max Complementary PNP type available 3. COLLECTOR A 2.70 3.10 E BC807. B 1.10 1.50 K B High collector current, high current gain. C 1.0 Typical D 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48 J D G 1.80 2.00 ORDERING
bc817-25 bc817-40.pdf
BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH
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BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collec
bc817-16 bc817-25 bc817-40.pdf
BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volt POWER 330 mW FEATURES General purpose amplifier applications 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICA
bc817-16 bc817-25 bc817-40.pdf
BC817 NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50
bc817-16 bc817-25 bc817-40.pdf
R UMW UMW BC817 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a
bc817-16 bc817-25 bc817-40.pdf
BC817-16/-25/-40 NPN Transistor Features SOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC817 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA=25 , unless otherwisenoted) Parameter Symbol Valu
bc817-16 bc817-25 bc817-40.pdf
BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B
bc817-16 bc817-25 bc817-40.pdf
HD ST0.3 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V C V Collector-Emitter Voltage 45 V CEO V Emitter
bc817-16 bc817-25 bc817-40.pdf
BC817 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton S
bc817-16 bc817-25 bc817-40.pdf
www.msksemi.com BC817-16/25/40 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) hFE
bc817-16 bc817-25 bc817-40.pdf
Jingdao Microelectronics co.LTD BC817 BC817 SOT-23 NPN TRANSISTOR 3 FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types BC807 (PNP) 2 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.EMITTER 3.COLLECTOR Sy
bc817-16 bc817-25 bc817-40.pdf
BC817 Series TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Co
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
bc817-16 bc817-25 bc817-40.pdf
BC817 BC817 BC817 BC817 BC8 17 TRANSISTOR(NPN) FEATURE For general AF applications SOT-23 High collector current High current gain 1 BASE Low collector-emitter saturation voltage 2 EMITTER Complementary types BC807 (PNP) 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
bc817-16 bc817-25 bc817-40.pdf
RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va
bc817-16 bc817-25 bc817-40.pdf
BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a Collector-Base Voltage 50 V Collec
bc817-16 bc817-25 bc817-40.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC817 FEATURES NPN Low Frequency AmplifierTransistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 50 V CBO - Emitter-
bc817-16 bc817-25 bc817-40.pdf
BC817 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless o
bc817-16 bc817-25 bc817-40.pdf
Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications A Complementary Types Available (BC ) SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H Maximum
bc817-40qa bc817-25qa.pdf
BC817-25QA; BC817-40QA 45 V, 500 mA NPN general-purpose transistors Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP compleme
bc817-25qa bc817-40qa.pdf
BC817-25QA; BC817-40QA 45 V, 500 mA NPN general-purpose transistors Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP compleme
bc817w bc817-16w bc817-25w bc817-40w.pdf
BC817W series 45 V, 500 mA NPN general-purpose transistors Rev. 7 11 June 2018 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC JEITA BC817W SOT323 - SC-70 BC807W BC817-16W BC807-16W B
bc817-16q bc817-25q-bc817-40q.pdf
BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT23 stringent requirements of automotive applications. Case Material Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Featu
bc817-16w bc817-25w bc817-40w.pdf
BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Epitaxial Planar Die Construction Case Material molded plastic, Green molding compound Complementary PNP Types BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi
bc817-16q bc817-25q bc817-40q.pdf
BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020
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BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant
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BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian
sbc817-25lt1g.pdf
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian
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BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant
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BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 V 3 Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 5.0 V 1 2 Collect
bc817-25lt3g.pdf
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian
sbc817-25lt3g.pdf
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-25dpmt1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC
lbc817-25wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. LBC817-25WT1G 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V SC-70 Emitter Base Voltage V EBO 5.0 V Collector Current Continuous I C 500 mAdc THERMAL CHARACTERISTICS
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC817-16LT1G LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. LBC817-40LT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 45 V 2 Collector Base Voltage V CBO 50 V SOT 23 Emitter Base Voltage V EBO 5.0 V Collector Current Contin
lbc817-25lt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40LT1G 3 MA
lbc817-25dmt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-25DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT
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BC817 SERIES General Purpose Transistors BC817-16/25/40LG BC817-16LG, BC817-25LG,BC817-40LG SERIES Features 3 Pb-Free Packages are Available 1 2 Maximum Ratings Rating Symbol Value Unit SOT-23 Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V COLLECTOR Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc 1 BASE 2 EMITTER Devi
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PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan
bc817-40-g bc817-25-g.pdf
General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features -For general AF applications. SOT-23 -High collector current. 0.119(3.00) -High current gain. 0.110(2.80) -Low collector-emitter saturation voltage. 3 0.056(1.40) Marking 0.047(1.20) BC817-16-G 6A 1 2 0.006(0.15) BC817-25-G 6B 0.083(2.10) 0.002(0.05) 0.066(1.70) BC817-40-G 6C 0.044(1.10)
kbc817-16 kbc817-25 kbc817-40c.pdf
KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions
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RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless
bc817-16q bc817-25q bc817-40q.pdf
RoHS RoHS COMPLIANT COMPLIANT BC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking
Otros transistores... BC808-25, BC808-25W, BC808-40, BC808-40W, BC817, BC817-16, BC817-16LT1, BC817-16W, 13005, BC817-25LT1, BC817-25W, BC817-40, BC817-40LT1, BC817-40W, BC818, BC818-16, BC818-16W
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