BC818 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2006BC817/BC818tmNPN Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC807/ BC808 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : BC817 50

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTORSOT-23SWITCHING AND AMPLIFIER APPLICATIONS Sutable for AF-Driver stages and low power output stages Complement to BC807/BC808ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC817 VCES 50 V:BC818 30 VCollector Emitter Voltage :BC817 VCEO 45 V:BC818 25 VEmitter-Base Voltage VEB

SOT23 NPN SILICON PLANARBC817MEDIUM POWER TRANSISTORSBC818ISSUE 4 june 1996 T I D T I 8 D 8 8 8 8 8 EC 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT

BC818NPN Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low 2power output stages SOT-23 Complementary pair with BC808 Ordering Information Type NO. Marking Package Code PA BC818 SOT-23 Device Code hFE Rank Year&Week

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC817BC818SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBC817 = 6DALL DIMENSIONS IN mmBC817-16 = 6ABC817-25 = 6BBC817-40 = 6CBC818 = 6HBC818-16 = 6EBC818-25 = 6FBC818-40 = 6GPin configuration1 = BASE2 =

BC818TRANSISTOR (NPN) BC818-16 SOT-23 BC818-25 BC818-40 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V

BC818-16BC818-25BC818-40 SOT-23 Transistor(NPN)1. BASE 2. EMITTER 3. COLLECTOR SOT-23Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V Dimen

SMD Type TransistorsNPN TransistorsBC818 (KC818)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFor general AF applications.1 2+0.1High collector current. +0.050.95 -0.1 0.1 -0.01+0.11.9-0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter Complementary PNP type available(BC808)3.collectorAbsolute Maximum Ratings Ta = 2

BC817K.../BC818K...NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Uni

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Uni

BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit

BC818-40LT1GGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VEMITTERCollector-Base Voltage VCBO 30 VEmitter-Base Voltage VEBO 5.0 V3Collector Current - Continuous IC 500 mAdcTHER

BC818FNPN Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC808F Ordering Information Type NO. Marking Package Code PA BC818F SOT-23F Device Code hFE Rank Year

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollec

SMD TypeProduct specificationKC818W(BC818W)FeaturesFor general AF applications.High collector current.High current gain.Low collector-emitter saturation voltage.1 Emitter1 Emitter2 Base2 Base3 Collector3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage

SMD Type TransistorsNPN TransistorsBC818A (KC818A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFor general AF applications.High collector current.1 2+0.1+0.050.95 -0.1 0.1 -0.01High current gain.+0.11.9-0.1Low collector-emitter saturation voltage.1.Base Complementary PNP type available(BC808A)2.Emitter3.collectorAbsolute Maximum Ratings Ta

BC817K / BC818KBC817K / BC818KSurface Mount Low Rth Si-Epi-Planar TransistorsNPN NPNSi-Epi-Planar Low Rth Transistoren fr die OberflchenmontageVersion 2011-10-26Power dissipation Verlustleistung 500 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 9

SUNROCBC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V V