BC857BWT1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC857BWT1
Código: 3F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 45
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 290
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar BC857BWT1
BC857BWT1
Datasheet (PDF)
..1. Size:143K onsemi
bc856bwt1 bc857bwt1 bc858awt1-series.pdf 
BC856BWT1 Series,BC857BWT1 Series,BC858AWT1 SeriesGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SC--70/SOT--323 which isdesigned for low power surface mount applications. 1BASEFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS2
0.1. Size:81K onsemi
bc857cwt1g bc857bwt1g.pdf
BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
0.2. Size:78K onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf
BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
0.3. Size:81K onsemi
sbc857bwt1g.pdf
BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
0.5. Size:279K lrc
lbc857bwt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat
Otros transistores... BC857ALT1
, BC857AR
, BC857AW
, BC857AWT1
, BC857B
, BC857BLT1
, BC857BR
, BC857BW
, TSB145
, BC857C
, BC857CLT1
, BC857CR
, BC857CW
, BC857CWT1
, BC857S
, BC858
, BC858A
.
