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BC858BLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC858BLT1
   Código: 3K
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 290
   Paquete / Cubierta: SOT23
 

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BC858BLT1 Datasheet (PDF)

 0.1. Size:148K  onsemi
 bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858blt3g bc859blt1g bc859clt1g.pdf pdf_icon

BC858BLT1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 0.2. Size:209K  onsemi
 bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf pdf_icon

BC858BLT1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 0.3. Size:234K  lrc
 lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

BC858BLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 0.4. Size:158K  lrc
 lbc858blt1g.pdf pdf_icon

BC858BLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

MOSTRAR MÁS

Otros transistores... BC857S , BC858 , BC858A , BC858ALT1 , BC858AR , BC858AW , BC858AWT1 , BC858B , BC557 , BC858BR , BC858BW , BC858BWT1 , BC858C , BC858CLT1 , BC858CR , BC858CW , BC858CWT1 .

 

 
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