BC858CWT1 Todos los transistores

 

BC858CWT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC858CWT1

Código: 3L

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 520

Encapsulados: SOT323

 Búsqueda de reemplazo de BC858CWT1

- Selecciónⓘ de transistores por parámetros

 

BC858CWT1 datasheet

 0.1. Size:276K  lrc
lbc858cwt1g.pdf pdf_icon

BC858CWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. CWT1G Features S-LBC856AWT1G, BWT1G We declare that the material of product c

 0.2. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf pdf_icon

BC858CWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

 7.1. Size:203K  diodes
bc856aw-bc858cw.pdf pdf_icon

BC858CWT1

BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful

 7.2. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf pdf_icon

BC858CWT1

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

Otros transistores... BC858BLT1 , BC858BR , BC858BW , BC858BWT1 , BC858C , BC858CLT1 , BC858CR , BC858CW , BC327 , BC859 , BC859A , BC859ALT1 , BC859AR , BC859AW , BC859AWT1 , BC859B , BC859BLT1 .

History: BDX66

 

 

 

 

↑ Back to Top
.