BC859CWT1 Todos los transistores

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BC859CWT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC859CWT1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hfe): 520

Empaquetado / Estuche: SOT323

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BC859CWT1 Datasheet (PDF)

5.1. bc859 bc860.pdf Size:131K _philips

BC859CWT1
BC859CWT1

DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 May 28 NXP Semiconductors Product data sheet PNP general purpose transistors BC859; BC860 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise input stages

5.2. bc859 bc860 4.pdf Size:51K _philips

BC859CWT1
BC859CWT1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general purpose transistors 1999 May 28 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 coll

5.3. bc859w bc860w 4.pdf Size:51K _philips

BC859CWT1
BC859CWT1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors BC859W; BC860W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3

5.4. bc859w bc860w.pdf Size:122K _philips

BC859CWT1
BC859CWT1

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Sep 03 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collect

5.5. bc856 bc857 bc858 bc859 bc860.pdf Size:144K _fairchild_semi

BC859CWT1
BC859CWT1

August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-B

5.6. bc856 bc857 bc858 bc859 bc860.pdf Size:56K _samsung

BC859CWT1
BC859CWT1

PNP EPITAXIAL BC856/857/858/859/860 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO :BC856 -80 V :BC857/860 -50 V :BC858/859 -30 V Collector-Emitter

5.7. bc856 bc857 bc858 bc859 bc860.pdf Size:271K _siemens

BC859CWT1
BC859CWT1

PNP Silicon AF Transistors BC 856 ... BC 860 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C SOT-23 BC 856 B 3Bs Q6270

5.8. bc856w bc857w bc858w bc859w bc860w.pdf Size:273K _siemens

BC859CWT1
BC859CWT1

PNP Silicon AF Transistors BC 856W ... BC 860W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C SOT-323 BC 856 BW

5.9. bc856 bc857 bc858 bc859 bc860.pdf Size:35K _diodes

BC859CWT1
BC859CWT1

SOT23 PNP SILICON PLANAR BC856 BC857 BC858 BC859 GENERAL PURPOSE TRANSISTORS BC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CHARACT

5.10. bc856series bc857series bc858series bc859series bc860series.pdf Size:140K _infineon

BC859CWT1
BC859CWT1

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-09-25 1 BC8

5.11. bc859 bc860.pdf Size:41K _kec

BC859CWT1
BC859CWT1

SEMICONDUCTOR BC859/860 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L For Complementary with NPN Type BC849/850 DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 MAXIMUM RATING (Ta=25 ) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 CHARACTERISTIC SYMBOL RATING UNIT G 1.90 H 0.95 BC859 -30 J 0.13+0.10/-0.05 C

5.12. bc856 bc857 bc858 bc859.pdf Size:438K _wietron

BC859CWT1
BC859CWT1

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 3 PNP Silicon 1 1 2 BASE XX = Device SOT-23 Code (See 1 2 Table Below) 2 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V -65 BC856 CEO V BC857 -45 BC858,BC859 -30 Collector-Base Voltage BC856 -80 V BC857 VCB

5.13. bc859 bc860.pdf Size:1161K _kexin

BC859CWT1
BC859CWT1

SMD Type Transistors PNP Transistors BC859~BC860 (KC859~KC860) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collec

5.14. bc859w bc860w.pdf Size:956K _kexin

BC859CWT1
BC859CWT1

SMD Type Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC849W and BC850W. C B 1.Base 2.Emitter E 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit BC859W -30 Collector - Base Voltage VCBO BC860W -50 BC859W -30 V Collector - Emitter Voltag

Otros transistores... BC859BLT1 , BC859BR , BC859BW , BC859BWT1 , BC859C , BC859CLT1 , BC859CR , BC859CW , TIP41C , BC860 , BC860A , BC860ALT1 , BC860AR , BC860AW , BC860AWT1 , BC860B , BC860BLT1 .

 


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