BCP56-10T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BCP56-10T1
   Código: BH-10_BK
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 130 MHz
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de transistor bipolar BCP56-10T1

BCP56-10T1 Datasheet (PDF)

..1. Size:81K onsemi
bcp56t1 bcp56t3 bcp56-10t1 bcp56-16t1 bcp56-16t1g bcp56-16t3.pdf

BCP56T1 SeriesPreferred DevicesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON Pb-Free Package is AvailableHIGH CURRENT TRANSISTOR Hig

0.1. Size:151K onsemi
bcp56-10t1g bcp56t3g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

0.2. Size:66K onsemi
bcp56t1g bcp56-10t1g bcp56-16t1g.pdf

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

0.3. Size:151K onsemi
sbcp56-10t1g.pdf