2SB1669 Todos los transistores

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATION the output of an IC. This transistor is ideal for OA and FA equipment Part No. Package such as motor and solenoid drivers. 2SB1669 TO-220AB 2SB1669-S TO-262 FEATURES 2SB1669-Z TO-220SMD High

isc Silicon PNP Power Transistor 2SB1669 DESCRIPTION High DC current amplifier rate h 100@VCE=-5V,IC=-0.5A FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc Silicon PNP Power Transistor 2SB1669-Z DESCRIPTION High DC current amplifier rate h 100@VCE=-5V,IC=-0.5A FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as

2SB1668 Transistors Power Transistor (-100V, -8A) 2SB1668 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 10.0 4.5 2) Built-in resistor between base and emitter. 3.2 2.8 3) Built-in damper diode. 4) Complements the 2SD2607. 1.2 1.3 0.8 ( ) (1) Base Gate 0.75 2.54 2.54 2.6 Absolute maximum ratings (Ta = 25 C) (1) (2) (3)

SMD Type Transistors PNP Transistors 2SB1667 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni