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BCW30R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCW30R
   Código: C5
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 215
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar BCW30R

 

BCW30R Datasheet (PDF)

 9.1. Size:451K  motorola
bcw29lt1 bcw30lt1.pdf

BCW30R
BCW30R

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW29LT1/DGeneral Purpose TransistorsBCW29LT1PNP SiliconCOLLECTORBCW30LT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 32 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 5.0 Vdc

 9.2. Size:47K  philips
bcw29 bcw30 4.pdf

BCW30R
BCW30R

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW29; BCW30PNP general purpose transistors1999 Apr 13Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

 9.3. Size:111K  philips
bcw29 bcw30 2.pdf

BCW30R
BCW30R

DISCRETE SEMICONDUCTORS DATA SHEETBCW29; BCW30PNP general purpose transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 collector General purpose

 9.4. Size:37K  st
bcw30.pdf

BCW30R
BCW30R

BCW30SMALL SIGNAL PNP TRANSISTORSType MarkingBCW30 C2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND3SWITCHING 1SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) -32 VCES BEVCEO Collector-Emitt

 9.5. Size:43K  fairchild semi
fsbcw30.pdf

BCW30R
BCW30R

Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

 9.6. Size:45K  fairchild semi
bcw30.pdf

BCW30R
BCW30R

BCW30PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3and switches requiring collector currents to 300mA. Sourced from process 68.2SOT-231Mark: C21. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -32 VVCES Collecto

 9.7. Size:309K  nxp
bcw29 bcw30.pdf

BCW30R
BCW30R

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.8. Size:28K  diodes
bcw29 bcw30.pdf

BCW30R

SOT23 PNP SILICON PLANARBCW29SMALL SIGNAL TRANSISTORSBCW30ISSUE 3 - JULY 1995 T I D T I ECB T T SOT23ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i i V T 8 V I I V I V I I i i V T V I

 9.9. Size:240K  onsemi
bcw30lt1-d.pdf

BCW30R
BCW30R

BCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant COLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector - Emitter Voltage VCEO -32 VdcCollector - Base Voltage VCBO -32 VdcEmitter-Base Voltage VEBO -5.0 Vdc3Collector Current - Continuous IC -100

 9.10. Size:101K  onsemi
bcw30lt1g.pdf

BCW30R
BCW30R

BCW30LT1General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are AvailableCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO -32 Vdc2EMITTERCollector - Base Voltage VCBO -32 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdc3THERMAL CHARACTERISTICSCharacteris

 9.11. Size:300K  onsemi
bcw30lt1g sbcw30lt1g.pdf

BCW30R
BCW30R

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.12. Size:154K  onsemi
sbcw30lt1g.pdf

BCW30R
BCW30R

BCW30LT1G, SBCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318-08STYLE 6COLLECTORMAXIMUM RATINGS3Ratin

 9.13. Size:77K  cdil
bcw29 bcw30.pdf

BCW30R
BCW30R

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBCW29BCW30SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBCW29 = C1ALL DIMENSIONS IN mmBCW30 = C2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW29 BCW30D.C. current gain at Tj = 25 C > 120 215

 9.14. Size:29K  kec
bcw29 bcw30.pdf

BCW30R

SEMICONDUCTORBCW29/30TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW31/32_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNIT

 9.15. Size:926K  kexin
bcw29 bcw30.pdf

BCW30R
BCW30R

SMD Type TransistorsPNP Transistors BCW29~BCW30 (KCW29~KCW30)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 32 V) NPN complements: BCW31 and BCW32. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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